APT11GF120BRD IGBT Transistor

The APT11GF120BRD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT11GF120BRD transistor as follows.

APT11GF120BRD Transistor Specification

Transistor Code		APT11GF120BRD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector Current (Maximum)	IC	11A
Operating Junction Temperature (Maximum)		150 oC

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