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APT102GA60B2 IGBT Transistor

The APT102GA60B2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT102GA60B2 transistor as follows.

Circuit diagram symbol of the APT102GA60B2 transistor

APT102GA60B2 Transistor Specification

Transistor Code APT102GA60B2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 780W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 102A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 630
Rise Time 37

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