APT100GT60JRDL IGBT Transistor

The APT100GT60JRDL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GT60JRDL transistor as follows.

APT100GT60JRDL Transistor Specification

Transistor Code		APT100GT60JRDL
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		475
Rise Time		75

UXPython is not the creator or an official representative of the APT100GT60JRDL IGBT transistor. You can download the official APT100GT60JRDL IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MMG100HB060H6EN IGBT Transistor SGW50N60HS IGBT Transistor 40N60C3R IGBT Transistor IXGH24N60CD1 IGBT Transistor MMG150D170B6EN IGBT Transistor APT80GP60B2G IGBT Transistor NGTG25N120FL2WG IGBT Transistor APT30GT60BRDQ2G IGBT Transistor IGC168T170S8RM IGBT Transistor APTGT100DA170D1 IGBT Transistor SGP40N60UF IGBT Transistor IXDN75N120 IGBT Transistor IRGP4072D IGBT Transistor KP730A IGBT Transistor IXDN55N120 IGBT Transistor IXXP50N60B3 IGBT Transistor DGG4015 IGBT Transistor IXYX120N120B3 IGBT Transistor AP20GT60I IGBT Transistor MMG100HB120H6HN IGBT Transistor