APT100GT120JR IGBT Transistor

The APT100GT120JR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GT120JR transistor as follows.

APT100GT120JR Transistor Specification

Transistor Code		APT100GT120JR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	570W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	67A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		6530
Rise Time		100

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