APT100GN60LDQ4G IGBT Transistor

The APT100GN60LDQ4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GN60LDQ4G transistor as follows.

APT100GN60LDQ4G Transistor Specification

Transistor Code		APT100GN60LDQ4G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	625W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.87V
Collector Current (Maximum)	IC	135A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		560
Rise Time		65

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