APT100GN120J IGBT Transistor

The APT100GN120J is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GN120J transistor as follows.

APT100GN120J Transistor Specification

Transistor Code		APT100GN120J
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	446W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		365
Rise Time		50

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