APT100GN120B2G IGBT Transistor

The APT100GN120B2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GN120B2G transistor as follows.

APT100GN120B2G Transistor Specification

Transistor Code		APT100GN120B2G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	960W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		365
Rise Time		50

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