APT100GF60JU3 IGBT Transistor

The APT100GF60JU3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GF60JU3 transistor as follows.

APT100GF60JU3 Transistor Specification

Transistor Code		APT100GF60JU3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	416W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	120A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		470
Rise Time		25

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