APT100GF60B2R IGBT Transistor

The APT100GF60B2R is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GF60B2R transistor as follows.

APT100GF60B2R Transistor Specification

Transistor Code		APT100GF60B2R
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TMAX
Collector Power Dissipation (Maximum)	Pc	390W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		480
Rise Time		200

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