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AP50GT60SW-HF IGBT Transistor

The AP50GT60SW-HF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP50GT60SW-HF transistor as follows.

Circuit diagram symbol of the AP50GT60SW-HF transistor

AP50GT60SW-HF Transistor Specification

Transistor Code AP50GT60SW-HF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 90A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 240
Rise Time 50

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