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AP30G40GEO-HF IGBT Transistor

The AP30G40GEO-HF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP30G40GEO-HF transistor as follows.

Circuit diagram symbol of the AP30G40GEO-HF transistor

AP30G40GEO-HF Transistor Specification

Transistor Code AP30G40GEO-HF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TSSOP8
Collector Power Dissipation (Maximum) Pc 1W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 6V
Collector-Emitter Saturation Voltage VCE(on) 5.5V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 30
Rise Time 900

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