AP30G120W IGBT Transistor

The AP30G120W is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP30G120W transistor as follows.

AP30G120W Transistor Specification

Transistor Code		AP30G120W
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		205
Rise Time		30

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