AP30G100W IGBT Transistor

The AP30G100W is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP30G100W transistor as follows.

AP30G100W Transistor Specification

Transistor Code		AP30G100W
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.8V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		105
Rise Time		40

UXPython is not the creator or an official representative of the AP30G100W IGBT transistor. You can download the official AP30G100W IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IRG4PH50UD IGBT Transistor IXA60IF1200NA IGBT Transistor DM2G150SH6N IGBT Transistor APTGF360U60D4 IGBT Transistor MGD623N IGBT Transistor IRGP4266D IGBT Transistor SGL15N60RUFD IGBT Transistor IXGK82N120B3 IGBT Transistor GT40M101 IGBT Transistor STGW20H65FB IGBT Transistor RCM10N40 IGBT Transistor IRGB6B60KD IGBT Transistor NGTB30N60SWG IGBT Transistor IXYN120N65B3D1 IGBT Transistor IXGT60N60C2 IGBT Transistor APT40GP60J IGBT Transistor APT83GU30B IGBT Transistor MGP20N14CL IGBT Transistor IGP06N60T IGBT Transistor SGD06N60 IGBT Transistor