AP28G45GEM IGBT Transistor

The AP28G45GEM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP28G45GEM transistor as follows.

AP28G45GEM Transistor Specification

Transistor Code		AP28G45GEM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SO8
Collector Power Dissipation (Maximum)	Pc	2.5W
Collector-Emitter Voltage (Maximum)	VCE	450V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	3.8V
Collector Current (Maximum)	IC	130A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		220
Rise Time		100

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