AP28G40GEO IGBT Transistor

The AP28G40GEO is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP28G40GEO transistor as follows.

AP28G40GEO Transistor Specification

Transistor Code		AP28G40GEO
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TSSOP8
Collector Power Dissipation (Maximum)	Pc	1W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	5.2V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		44
Rise Time		800

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