AP28G40GEM-HF IGBT Transistor

The AP28G40GEM-HF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP28G40GEM-HF transistor as follows.

AP28G40GEM-HF Transistor Specification

Transistor Code		AP28G40GEM-HF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SO8
Collector Power Dissipation (Maximum)	Pc	1W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	3.6V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		38
Rise Time		800

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