AP26G40GEO-HF IGBT Transistor

The AP26G40GEO-HF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP26G40GEO-HF transistor as follows.

AP26G40GEO-HF Transistor Specification

Transistor Code		AP26G40GEO-HF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TSSOP8
Collector Power Dissipation (Maximum)	Pc	1W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		45
Rise Time		1600

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