AP20G45EJ IGBT Transistor

The AP20G45EJ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP20G45EJ transistor as follows.

AP20G45EJ Transistor Specification

Transistor Code		AP20G45EJ
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO251
Collector Power Dissipation (Maximum)	Pc	20W
Collector-Emitter Voltage (Maximum)	VCE	450V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	5V
Collector Current (Maximum)	IC	130A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		145
Rise Time		72

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