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AP20G45EH IGBT Transistor

The AP20G45EH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP20G45EH transistor as follows.

Circuit diagram symbol of the AP20G45EH transistor

AP20G45EH Transistor Specification

Transistor Code AP20G45EH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252
Collector Power Dissipation (Maximum) Pc 20W
Collector-Emitter Voltage (Maximum) VCE 450V
Gate-Emitter Voltage (Maximum) VGE 6V
Collector-Emitter Saturation Voltage VCE(on) 5V
Collector Current (Maximum) IC 130A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 145
Rise Time 72

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