AOK30B60D1 IGBT Transistor

The AOK30B60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AOK30B60D1 transistor as follows.

AOK30B60D1 Transistor Specification

Transistor Code		AOK30B60D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		153
Rise Time		44

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