6SI75N12 IGBT Transistor

The 6SI75N12 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 6SI75N12 transistor as follows.

6SI75N12 Transistor Specification

Transistor Code		6SI75N12
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	103A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		720
Rise Time		70

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