6SI75N12 IGBT Transistor

The 6SI75N12 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 6SI75N12 transistor as follows.

6SI75N12 Transistor Specification

Transistor Code		6SI75N12
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	103A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		720
Rise Time		70

UXPython is not the creator or an official representative of the 6SI75N12 IGBT transistor. You can download the official 6SI75N12 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APTGT75X120E3 IGBT Transistor IXGH30N60B2D1 IGBT Transistor IXXH60N65B4H1 IGBT Transistor IXGK35N120BD1 IGBT Transistor HGTG27N60C3R IGBT Transistor FD600R06ME3_S2 IGBT Transistor APTGT75TA120P IGBT Transistor KGF15N120KDA IGBT Transistor IXXH30N60C3D1 IGBT Transistor VS-GB100NH120N IGBT Transistor MMIX2S50N60B4D1 IGBT Transistor APT30GT60BRDQ2G IGBT Transistor MSAGZ52F120A IGBT Transistor SGB10N60A IGBT Transistor HGTD10N40F1S9A IGBT Transistor STGP10N60L IGBT Transistor MGW30N60 IGBT Transistor IXBH16N170 IGBT Transistor SII300N06 IGBT Transistor APTLGF210U120T IGBT Transistor