50MT060WHTAPBF IGBT Transistor

The 50MT060WHTAPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 50MT060WHTAPBF transistor as follows.

50MT060WHTAPBF Transistor Specification

Transistor Code		50MT060WHTAPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MTP
Collector Power Dissipation (Maximum)	Pc	658W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		510

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