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40N60C3R IGBT Transistor

The 40N60C3R is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 40N60C3R transistor as follows.

Circuit diagram symbol of the 40N60C3R transistor

40N60C3R Transistor Specification

Transistor Code 40N60C3R
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 291W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 56

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