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2N6975 IGBT Transistor

The 2N6975 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 2N6975 transistor as follows.

Circuit diagram symbol of the 2N6975 transistor

2N6975 Transistor Specification

Transistor Code 2N6975
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 100W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 4.5V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 50

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