2E715B IGBT Transistor

The 2E715B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 2E715B transistor as follows.

2E715B Transistor Specification

Transistor Code		2E715B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		KT9M
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		250

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