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25MT060WFAPBF IGBT Transistor

The 25MT060WFAPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 25MT060WFAPBF transistor as follows.

Circuit diagram symbol of the 25MT060WFAPBF transistor

25MT060WFAPBF Transistor Specification

Transistor Code 25MT060WFAPBF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MTP
Collector Power Dissipation (Maximum) Pc 195W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.22V
Collector Current (Maximum) IC 69A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 714

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