25MT060WFAPBF IGBT Transistor

The 25MT060WFAPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 25MT060WFAPBF transistor as follows.

25MT060WFAPBF Transistor Specification

Transistor Code		25MT060WFAPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MTP
Collector Power Dissipation (Maximum)	Pc	195W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.22V
Collector Current (Maximum)	IC	69A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		714

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