20N35GVL IGBT Transistor

The 20N35GVL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 20N35GVL transistor as follows.

20N35GVL Transistor Specification

Transistor Code		20N35GVL
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	375V
Gate-Emitter Voltage (Maximum)	VGE	10V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		30000

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