20MT120UFAPBF IGBT Transistor

The 20MT120UFAPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 20MT120UFAPBF transistor as follows.

20MT120UFAPBF Transistor Specification

Transistor Code		20MT120UFAPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MTP
Collector Power Dissipation (Maximum)	Pc	240W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.29V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		344

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