1MBI200N-120 IGBT Transistor

The 1MBI200N-120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 1MBI200N-120 transistor as follows.

1MBI200N-120 Transistor Specification

Transistor Code		1MBI200N-120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		M127
Collector Power Dissipation (Maximum)	Pc	1500W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		11600
Rise Time		250

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