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1MBI200N-120 IGBT Transistor

The 1MBI200N-120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 1MBI200N-120 transistor as follows.

Circuit diagram symbol of the 1MBI200N-120 transistor

1MBI200N-120 Transistor Specification

Transistor Code 1MBI200N-120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package M127
Collector Power Dissipation (Maximum) Pc 1500W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 125 oC
Collector Capacitance 11600
Rise Time 250

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