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1MBH30D-060 IGBT Transistor

The 1MBH30D-060 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 1MBH30D-060 transistor as follows.

Circuit diagram symbol of the 1MBH30D-060 transistor

1MBH30D-060 Transistor Specification

Transistor Code 1MBH30D-060
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PL
Collector Power Dissipation (Maximum) Pc 220W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 58A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 1200

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