1MB10D-120 IGBT Transistor

The 1MB10D-120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 1MB10D-120 transistor as follows.

1MB10D-120 Transistor Specification

Transistor Code		1MB10D-120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	135W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		1200

UXPython is not the creator or an official representative of the 1MB10D-120 IGBT transistor. You can download the official 1MB10D-120 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXSX50N60BD1 IGBT Transistor CY25AAJ-8 IGBT Transistor STGF19NC60WD IGBT Transistor IXGR16N170AH1 IGBT Transistor MUBW50-12E8 IGBT Transistor IXGH48N60B3C1 IGBT Transistor APT60GU30B IGBT Transistor MMG100SR060UK IGBT Transistor IXGH24N170AH1 IGBT Transistor HGTP3N60A4 IGBT Transistor STGB20NC60V IGBT Transistor APT200GN60J IGBT Transistor IRGB4064D IGBT Transistor SKM100GB12V IGBT Transistor IXST24N60B IGBT Transistor RJP60F0DPM IGBT Transistor GT30J124 IGBT Transistor IKD15N60RF IGBT Transistor APT25GP90B IGBT Transistor RJQ6008DPM IGBT Transistor