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1MB08-120 IGBT Transistor

The 1MB08-120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 1MB08-120 transistor as follows.

Circuit diagram symbol of the 1MB08-120 transistor

1MB08-120 Transistor Specification

Transistor Code 1MB08-120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 115W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.5V
Collector Current (Maximum) IC 13A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 1200

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