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10N50C1D IGBT Transistor

The 10N50C1D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 10N50C1D transistor as follows.

Circuit diagram symbol of the 10N50C1D transistor

10N50C1D Transistor Specification

Transistor Code 10N50C1D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 75W
Collector-Emitter Voltage (Maximum) VCE 500V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 50

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