ZXMS6006SGQ MOSFET Transistor

The ZXMS6006SGQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMS6006SGQ transistor as follows.

ZXMS6006SGQ Transistor Specification

Transistor Code		ZXMS6006SGQ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Transistor SMD Code		ZXMS6006S
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	1W
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1.5V

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