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ZXMS6006DGQ MOSFET Transistor

The ZXMS6006DGQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMS6006DGQ transistor as follows.

Circuit diagram symbol of the ZXMS6006DGQ transistor

ZXMS6006DGQ Transistor Specification

Transistor Code ZXMS6006DGQ
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-223
Transistor SMD Code ZXMS6006D
Drain-Source Voltage (Maximum) VDS 60V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 1.3W
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 1.5V

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