ZXMS6005DGQ MOSFET Transistor

The ZXMS6005DGQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMS6005DGQ transistor as follows.

ZXMS6005DGQ Transistor Specification

Transistor Code		ZXMS6005DGQ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Transistor SMD Code		ZXMS6005D
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		1.5V

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