ZXMP6A17E6Q MOSFET Transistor

The ZXMP6A17E6Q is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMP6A17E6Q transistor as follows.

ZXMP6A17E6Q Transistor Specification

Transistor Code		ZXMP6A17E6Q
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-26
Transistor SMD Code		6A17
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.4nS
Gate-Threshold Voltage (Maximum)		3V

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