ZXMP10A17E6Q MOSFET Transistor

The ZXMP10A17E6Q is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMP10A17E6Q transistor as follows.

ZXMP10A17E6Q Transistor Specification

Transistor Code		ZXMP10A17E6Q
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-26
Transistor SMD Code		1A17
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		36.6pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.5nS
Gate-Threshold Voltage (Maximum)		4V

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