ZXMN6A08E6Q MOSFET Transistor

The ZXMN6A08E6Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN6A08E6Q transistor as follows.

ZXMN6A08E6Q Transistor Specification

Transistor Code		ZXMN6A08E6Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-26
Transistor SMD Code		6A8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		44.2pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.1nS
Gate-Threshold Voltage (Maximum)		1V

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