ZXMN4A06GQ MOSFET Transistor

The ZXMN4A06GQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN4A06GQ transistor as follows.

ZXMN4A06GQ Transistor Specification

Transistor Code		ZXMN4A06GQ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Transistor SMD Code		N4A06
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		93pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.8nS
Gate-Threshold Voltage (Maximum)		1V

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