ZXMN2B03E6 MOSFET Transistor

The ZXMN2B03E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN2B03E6 transistor as follows.

ZXMN2B03E6 Transistor Specification

Transistor Code		ZXMN2B03E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		1160pF
Total Gate Charge		14.5nC

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