ZXMN10A25GTA MOSFET Transistor

The ZXMN10A25GTA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN10A25GTA transistor as follows.

ZXMN10A25GTA Transistor Specification

Transistor Code		ZXMN10A25GTA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Transistor SMD Code		ZXMN10A25
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		57pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.7nS
Gate-Threshold Voltage (Maximum)		4V

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