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ZXMN10A25G MOSFET Transistor

The ZXMN10A25G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN10A25G transistor as follows.

Circuit diagram symbol of the ZXMN10A25G transistor

ZXMN10A25G Transistor Specification

Transistor Code ZXMN10A25G
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 859pF
Total Gate Charge 17nC

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