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ZXMN10A08DN8 MOSFET Transistor

The ZXMN10A08DN8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN10A08DN8 transistor as follows.

Circuit diagram symbol of the ZXMN10A08DN8 transistor

ZXMN10A08DN8 Transistor Specification

Transistor Code ZXMN10A08DN8
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 405pF

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