ZVP2110GTC MOSFET Transistor

The ZVP2110GTC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZVP2110GTC transistor as follows.

ZVP2110GTC Transistor Specification

Transistor Code		ZVP2110GTC
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-223
Transistor SMD Code		ZVP2110
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3.5V

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