ZVP2110G MOSFET Transistor

The ZVP2110G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZVP2110G transistor as follows.

ZVP2110G Transistor Specification

Transistor Code		ZVP2110G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C

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