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ZVN2110GTA MOSFET Transistor

The ZVN2110GTA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZVN2110GTA transistor as follows.

Circuit diagram symbol of the ZVN2110GTA transistor

ZVN2110GTA Transistor Specification

Transistor Code ZVN2110GTA
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-223
Transistor SMD Code ZVN2110
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 4Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 16pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 2.4V

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