ZVN2110ASTOA MOSFET Transistor

The ZVN2110ASTOA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZVN2110ASTOA transistor as follows.

ZVN2110ASTOA Transistor Specification

Transistor Code		ZVN2110ASTOA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.4V

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