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YTF830 MOSFET Transistor

The YTF830 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the YTF830 transistor as follows.

Circuit diagram symbol of the YTF830 transistor

YTF830 Transistor Specification

Transistor Code YTF830
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.3Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 22nC

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