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XP202A0003MR-G MOSFET Transistor

The XP202A0003MR-G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the XP202A0003MR-G transistor as follows.

Circuit diagram symbol of the XP202A0003MR-G transistor

XP202A0003MR-G Transistor Specification

Transistor Code XP202A0003MR-G
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Total Gate Charge 10nC

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